P1120ETFB Datasheet and Specifications PDF

NIKO-SEM N-Channel Enhancement Mode P1120ETFB Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 280mΩ ID 11A D G S ABSOLUTE MAXIMUM RATINGS (T.

Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS STATIC VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V REV 1.0 1 LIMITS MIN TYP MAX UNIT 200 V 12 3 ±100 nA G-17-3 NIKO-SEM N-Channel Enhancement Mode P1120ETFB Field Effect Transistor TO-220F Halogen-Free & Lead-Free Ze.

P1120ETFB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200V 280mΩ @VGS = 10V 11A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST.

eakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 200 V 1 2 3 ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 200V, VGS = 0V VDS = 160V, VGS = 0V, TJ = 125 °C 1 mA 10 Drain-Source On-State Re.