The P1403EV8 is a P-Channel MOSFET.
| Part Number | P1403EV8 Datasheet |
|---|---|
| Manufacturer | UNIKC |
| Overview | P1403EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 14mΩ @VGS = -10V ID - 12A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST. . |
| Part Number | P1403EV8 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
P1403EV8-VB
P1403EV8-VB Datasheet
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.011 at VGS = - 10 V
0.012 at VGS = - 4.5 V
ID (A)d - 11.6 - 10
Qg (Typ.
* Halogen-free According to IEC 61249-2-21 Available * TrenchFET® Power MOSFET * 100 % Rg Tested * 100 % UIS Tested APPLICATIONS * Load Switches - Notebook PCs - Desktop PCs ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltag. |
| Part Number | P1403EV8 Datasheet |
|---|---|
| Description | P-Channel FET |
| Manufacturer | NIKO-SEM |
| Overview | NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EV8 Field Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30 14mΩ -12 D G S ABSOLUTE MAXIMUM RAT. S STATIC LIMITS UNIT MIN TYP MAX Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±25V VDS = -24V, VGS = 0V . |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| UnikeyIC | 400000 | 100+ : 0.174 USD 200+ : 0.171 USD 300+ : 0.1667 USD |
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| Unikeyic (ICkey) | 400000 | 100+ : 0.174 USD 200+ : 0.171 USD 300+ : 0.1667 USD |
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| Axis Part Limited | 20 | 1+ : 0.2203 USD 10+ : 0.2158 USD 30+ : 0.2113 USD 100+ : 0.2082 USD |
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