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P1403EV8
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
14mΩ @VGS = -10V
ID - 12A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1 , 2
TA = 25 °C TA = 70 °C
ID IDM
-12 -10 -65
Avalanche Current
IAS -39
Avalanche Energy
L = 0.1mH
EAS
89
Power Dissipation
TA = 25 °C TA = 70 °C
PD
3 2
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
P1403EV8 Datasheet
