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P1403CV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 14.6mΩ @VGS = 10V
ID 11A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±12
Continuous Drain Current1 Pulsed Drain Current2
TA = 25 °C TA = 70 °C
ID IDM
11 7 45
Avalanche Current
IAS 29
Avalanche Energy
L = 0.1mH
EAS
40
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.5 1
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient 1limited by maximum junction temperature. 2Limited by package.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 50 °C / W
Ver 1.
P1403CV Datasheet
