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P1406BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 12.5mΩ @VGS = 10V
ID 12A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
12 10 40
Avalanche Current
IAS 39
Avalanche Energy
L = 0.1mH
EAS
76
Power Dissipation3
TA= 25 °C TA =70 °C
PD
4 2.
P1406BV Datasheet
