The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P1402CDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 14mΩ @VGS = 4.5V
ID 45A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±12
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
45 19 140
Avalanche Current
IAS 33
Avalanche Energy
L = 0.1mH
EAS
52
Power Dissipation
TC = 25 °C TC = 100 °C
PD
48 19
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 175
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle≤1%
SYMBOL
RqJC RqJA
TYPICAL
MAXIMUM
2.6 110
UNITS °C / W
Rev 1.
P1402CDG Datasheet
