P1525ETFB Datasheet and Specifications PDF

P1525ETFB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 250V 260mΩ @VGS = 10V 15A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST.

-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 250 V 1 2 3 ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 250V, VGS = 0V VDS = 200V, VGS = 0V, TJ = 125 °C 1 mA 10 Drain-Source O.

NIKO-SEM N-Channel Enhancement Mode P1525ETFB Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V 260mΩ ID 15A D G S ABSOLUTE MAXIMUM RATINGS (T.

Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) VGS = 0V, ID = 250A VDS = VGS, ID = 250A 250 V 12 3 IGSS VDS = 0V, VGS = ±20V ±100 nA VDS = 250V, VGS = 0V IDSS VDS = 200V, VGS = 0V, TJ = 125 °C 1 A 10 REV 1.0 1 F-3.