P2N04L03 Datasheet and Specifications PDF

P2N04L03-VB P2N04L03-VB Datasheet N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package 40 0.0015 200 Single TO-263-7L TO.

* Trench power MOSFET
* Package with low thermal resistance
* 100 % Rg and UIS tested D Top View S D G G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C .

and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare.

* N-Channel Product Summary VDS RDS(on) max. SMD version ID 40 2.7 160 P- TO263 -7-3 V mΩ A
* Enhancement mode
* Logic Level
* High Current Rating
* Low On-Resistance RDS(on)
* 175°C operating temperature
* Avalanche rated
* d v/dt rated Type Package SPB160N04S2L-03 P- TO263 -7-3 Ordering Code .