P3004ND5G Datasheet and Specifications PDF

P3004ND5G N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 30mΩ @VGS = 10V -40V 55mΩ @VGS = -10V ID 12A -8.8A Channel N P TO-252- 5 100% Rg tested 100% UIS tested A.

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NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P3004ND5G TO-252-5 Halogen-Free & Lead-Free PRODUCT SUMMARY S2 G2 V(BR)DSS N-Channel P-Channel 40 -40 RDS(ON) 30mΩ 55mΩ ID 12A -.

rature. Duty cycle  1% ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC VGS = 0V, ID = 250A Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A VDS = VGS, ID = 250A Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A N-Ch.