P3710BD Datasheet
P3710BD Datasheet (VBsemi)
VBsemi
P3710BD-VB P3710BD-VB Datasheet N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.017 at VGS = 10 V ID (A) 70a TO-220AB FEATURES • TrenchFET® Power M.
* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* Low Thermal Resistance Package
* 100 % Rg Tested
APPLICATIONS
* Isolated DC/DC Converters
D
RoHS
COMPLIANT
GD S Top View
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Vol.
P3710BD Datasheet (UNIKC)
UNIKC
P3710BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 37mΩ @VGS = 10V ID 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST COND.
.