P5504EDG Datasheet
P5504EDG Datasheet (UNIKC)
UNIKC
P5504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 55mΩ @VGS = -10V ID -21A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST C.
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P5504EDG Datasheet (Niko-Sem)
Niko-Sem
NIKO-SEM P-Channel Enhancement Mode Field Effect Transistor P5504EDG TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 55mΩ ID -21A G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE.
tate Drain Current 1 LIMITS UNIT MIN TYP MAX V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -32V, VGS = 0V VDS = -30V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V -40 -1.5 -2 -3 V ±250 nA 1 10 µA A -96 REV1.0 1 Oct-1.