PK5G6EA Datasheet
PK5G6EA Datasheet (NIKO-SEM)
NIKO-SEM
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PK5G6EA PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 2.4mΩ ID 87A Features • Pb−Free, Halogen Free and R.
* Pb
*Free, Halogen Free and RoHS compliant.
* Low RDS(on) to Minimize Conduction Losses.
* Ohmic Region Good RDS(on) Ratio.
* Optimized Gate Charge to Minimize Switching Losses.
* Products Integrated ESD diode with ESD Protected.
Applications
* Protection Circuits Applications.
* Logic/Load Switch C.
PK5G6EA Datasheet (UNIKC)
UNIKC
PK5G6EA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 2.4mΩ @VGS = 10V 87A 100% UIS Tested 100% Rg Tested PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless O.
The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RqJA t ≦10s value. 4Package limitation current is 51A. UNITS °C / W REV 1.0 1 2015/10/15 PK5G6EA N-Channel Enhancement Mode .