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PK5G6EA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
20V
2.4mΩ @VGS = 10V
87A
100% UIS Tested
100% Rg Tested
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±12
Continuous Drain Current4 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID
87 55
IDM
120
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
31 25
Avalanche Current
IAS
51
Avalanche Energy
L = 0.1mH
EAS
130
Power Dissipation
TC = 25 °C TC = 100 °C
PD
31 12.5
Power Dissipation3
TA = 25 °C TA = 70 °C
PD
4 2.
PK5G6EA Datasheet
