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PK516BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
30V
7mΩ @VGS = 10V
51A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
51 ID
32
IDM
120
Continuous Drain Current
TA = 25 °C TA = 70 °C
14
ID
11
Avalanche Current
IAS
27
Avalanche Energy
L = 0.1mH
EAS
36
Power Dissipation
TC = 25 °C TC = 100 °C
31
PD
12
Power Dissipation
TA = 25 °C TA = 70 °C
2.4
PD
1.
PK516BA Datasheet
