Click to expand full text
PK510BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID2
30V
3.3mΩ @VGS = 10V
86A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
86 ID
54
IDM
150
Continuous Drain Current
TA = 25 °C TA = 70 °C
21
ID
16
Avalanche Current
IAS
47
Avalanche Energy
L = 0.1mH
EAS
110
Power Dissipation
TC = 25 °C TC = 100 °C
41
PD
16
Power Dissipation
TA = 25 °C TA = 70 °C
2.5
PD
1.
PK510BA Datasheet
