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PK512BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID2
30V
2.8mΩ @VGS = 10V
93A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
93 ID
59
IDM
150
Continuous Drain Current
TA = 25 °C TA = 70 °C
22
ID
17
Avalanche Current
IAS
49
Avalanche Energy
L = 0.1mH
EAS
120
Power Dissipation
TC = 25 °C TC = 100 °C
44
PD
17
Power Dissipation
TA = 25 °C TA = 70 °C
2.5
PD
1.