• Part: PK5G3EA
  • Description: P-Channel Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: NIKO-SEM
  • Size: 276.57 KB
Download PK5G3EA Datasheet PDF
NIKO-SEM
PK5G3EA
Features - Pb- Free, Halogen Free and Ro HS pliant. - Low RDS(on) to Minimize Conduction Losses. - Ohmic Region Good RDS(on) Ratio. - Optimized Gate Charge to Minimize Switching Losses. - Products Integrated ESD diode with ESD Protected up to 4KV. Applications - Protection Circuits Applications. - Logic/Load Switch Circuits Applications. D D DD #1 S S S G G. GATE D. DRAIN S. SOURCE 100% UIS Tested 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC = 25 °C TC = 100 °C TA = 25 °C Pulsed Drain Current1 TA = 70 °C Avalanche Current Avalanche Energy L = 0.1m H Power Dissipation TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS IDM IAS EAS Tj, Tstg LIMITS -30 ±25 -68 -43 -15 -12 -150 -68 231 48 19 2.3 1.5 -55 to 150 UNITS V V A m J W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL...