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PK5G3EA - P-Channel Enhancement Mode Field Effect Transistor

Download the PK5G3EA datasheet PDF. This datasheet also covers the PK5G3EA-NIKO variant, as both devices belong to the same p-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Pb.
  • Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Products Integrated ESD diode with ESD Protected up to 4KV.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PK5G3EA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PK5G3EA
Manufacturer NIKO-SEM
File Size 276.57 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PK5G3EA Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM P-Channel Logic Level Enhancement Mode PK5G3EA Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 6.1mΩ ID -68A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. • Products Integrated ESD diode with ESD Protected up to 4KV. Applications • Protection Circuits Applications. • Logic/Load Switch Circuits Applications. D D DD #1 S S S G G. GATE D. DRAIN S.