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PK5V8EN - N-Channel Enhancement Mode Field Effect Transistor

Download the PK5V8EN datasheet PDF. This datasheet also covers the PK5V8EN-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Pb.
  • Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Products Integrated ESD diode with ESD Protected.
  • 100% UIS Tested & Rg Tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PK5V8EN-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PK5V8EN
Manufacturer NIKO-SEM
File Size 365.03 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PK5V8EN Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor PK5V8EN PDFN 5x6PX Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 1.9mΩ ID 171A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. • Products Integrated ESD diode with ESD Protected. • 100% UIS Tested & Rg Tested. Applications • Protection Circuits Applications. • Logic/Load Switch Circuits Applications. • Computer for DC to DC Converters Applications. ESD Protected Gate D D DD #1 S S S G G. GATE D. DRAIN S.