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PK5E4BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
30V
9.5mΩ @VGS = 10V
40A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID
40 25
IDM
120
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
14 11
Avalanche Current
IAS
21
Avalanche Energy
L =0.1mH
EAS
22
Power Dissipation
TC = 25 °C TC = 100 °C
PD
29 12
Power Dissipation4
TA = 25 °C TA = 70 °C
PD
3.9 2.
PK5E4BA Datasheet
