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PMBT3906 Datasheet

The PMBT3906 is a PNP switching transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberPMBT3906
ManufacturerPhilips Semiconductors
Overview PNP switching transistor in a SOT23 plastic package. NPN complement: PMBT3904. MARKING TYPE NUMBER PMBT3906 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗2A Top view ha.
* Low current (max. 100 mA)
* Low voltage (max. 40 V). APPLICATIONS
* Telephony and professional communication equipment. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: PMBT3904. MARKING TYPE NUMBER PMBT3906 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysi.
Part NumberPMBT3906
DescriptionPNP Transistor
ManufacturerNexperia
Overview PNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT3904. 1.2 Features and benefits „ Collector-emitter voltage VCEO = −40 V „ Colle. and benefits „ Collector-emitter voltage VCEO = −40 V „ Collector current capability IC = −200 mA 1.3 Applications „ General amplification and switching 1.4 Quick reference data Table 1. Symbol VCEO IC Quick reference data Parameter Conditions collector-emitter voltage open base collector cur.
Part NumberPMBT3906
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·PNP switching transistor in a SOT23 plastic package ·NPN complement:PMBT3904 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for telephony a. utoff Current VCB= -40V; IE= 0 -100 nA hFE-1 DC Current Gain IC= -10mA ; VCE=-1 V 100 300 hFE-2 DC Current Gain IC= -50mA ; VCE=-1 V 60 hFE-3 DC Current Gain IC= -100mA ; VCE=-1 V 30 VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA -0.3 V VBE(sat) Base-Emitter Sat.

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