PMGD290UCEA Datasheet
PMGD290UCEA Datasheet (Nexperia)
Nexperia
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits •.
and benefits
* Very fast switching
* Trench MOSFET technology
* 2 kV ESD protection
* AEC-Q101 qualified
3. Applications
* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits
* Automotive applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Para.
PMGD290UCEA Datasheet (NXP Semiconductors)
NXP Semiconductors
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits •.
and benefits
* Very fast switching
* Trench MOSFET technology
* 2 kV ESD protection
* AEC-Q101 qualified
3. Applications
* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits
* Automotive applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Para.