PMN50XP Datasheet
PMN50XP Datasheet (NXP Semiconductors)
NXP Semiconductors
P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Low threshold voltage s Low on-state losses 1.3 Applications s Low power DC-t.
s Low threshold voltage s Low on-state losses
1.3 Applications
s Low power DC-to-DC converters s Load switching s Battery management s Battery powered portable equipment
1.4 Quick reference data
s VDS ≤
*20 V s RDSon ≤ 60 mΩ s ID ≤
*4.8 A s QGD = 1.3 nC (typ)
2. Pinning information
Table 1: Pin 1.
PMN50XP Datasheet (VBsemi)
VBsemi
PMN50XP-VB PMN50XP-VB Datasheet P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.049 at VGS = - 10 V - 30 0.054 at VGS = - 4.5 V ID (A)a - 4.8 - 4.1 Qg (Typ.) 5.
* Halogen-free According to IEC 61249-2-21
Available
* TrenchFET® Power MOSFET
APPLICATIONS
* Load Switch
3 mm
TSOP-6 Top V iew
1
6
2
5
3
4
2.85 mm
(4) S (3) G
(1, 2, 5, 6) D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Volt.