NXP Semiconductors PMN50XP
P-channel TrenchMOS extremely low level FET
| Part No. | PMN50XP |
|---|---|
| Datasheet | PMN50XP Download |
| Manufacturer |  NXP Semiconductors |
| Description | P-channel TrenchMOS extremely low level FET |
| Buy | Stock & Price |
FEATURES
s Low threshold voltage s Low on-state losses 1.3APPLICATIONS
s Low power DC-to-DC converters s Load switching s Battery management s Battery powered portable equipment 1.4 Quick reference data s VDS ≤ −20 V s RDSon ≤ 60 mΩ s ID ≤ −4.8 A s QGD = 1.3 nC (typ) 2. Pinning information Table 1: Pin 1, 2, 5, 6 3 4 PinningDESCRIPTION
drain (D) gate (G) source (S) 1 2 3 G S 003aaa671 Simplified outline 6 5 4 Symbol D SOT457 (TSOP6) Philips Semiconductors PMN50XP P-channel TrenchMOS extremely low level FET 3. Ordering information Table 2: Ordering information Package Name PMN50XP TSOP6DESCRIPTION
plastic surface mounted package (TSOP6); 6 leads Version SOT457 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM Parameter drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction...
