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PMN50XP
P-channel TrenchMOS extremely low level FET
Rev. 01 — 23 January 2006 Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
s Low threshold voltage s Low on-state losses
1.3 Applications
s Low power DC-to-DC converters s Load switching s Battery management s Battery powered portable equipment
1.4 Quick reference data
s VDS ≤ −20 V s RDSon ≤ 60 mΩ s ID ≤ −4.8 A s QGD = 1.3 nC (typ)
2. Pinning information
Table 1: Pin 1, 2, 5, 6 3 4 Pinning Description drain (D) gate (G) source (S)
1 2 3
G S
003aaa671
Simplified outline
6 5 4
Symbol
D
SOT457 (TSOP6)
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
3.
PMN50XP Datasheet
