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PMN50XP - P-channel TrenchMOS extremely low level FET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Key Features

  • s Low threshold voltage s Low on-state losses 1.3.

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www.DataSheet4U.com PMN50XP P-channel TrenchMOS extremely low level FET Rev. 01 — 23 January 2006 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Low threshold voltage s Low on-state losses 1.3 Applications s Low power DC-to-DC converters s Load switching s Battery management s Battery powered portable equipment 1.4 Quick reference data s VDS ≤ −20 V s RDSon ≤ 60 mΩ s ID ≤ −4.8 A s QGD = 1.3 nC (typ) 2. Pinning information Table 1: Pin 1, 2, 5, 6 3 4 Pinning Description drain (D) gate (G) source (S) 1 2 3 G S 003aaa671 Simplified outline 6 5 4 Symbol D SOT457 (TSOP6) Philips Semiconductors PMN50XP P-channel TrenchMOS extremely low level FET 3.