PSMN015-100B Datasheet and Specifications PDF

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communi.

and benefits
* Low conduction losses due to low on-state resistance
* Rated for avalanche ruggedness 1.3 Applications
* DC-to-DC convertors
* Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol VDS ID Parameter drain-source voltage drain current Conditions T.

SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:• d.c. to d.c. converters • switche.

* ’Trench’ technology
* Very low on-state resistance
* Fast switching
* Low thermal resistance g PSMN015-100B, PSMN015-100P QUICK REFERENCE DATA d SYMBOL VDSS = 100 V ID = 75 A RDS(ON) ≤ 15 mΩ s GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowes.