PSMN3R5-30YL Datasheet and Specifications PDF

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications ap.

and benefits
* High efficiency due to low switching and conduction losses
* Suitable for logic level gate drive sources 1.3 Applications
* Class-D amplifiers
* DC-to-DC converters
* Motor control
* Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb =.

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications ap.

and benefits
* High efficiency due to low switching and conduction losses
* Suitable for logic level gate drive sources 3. Applications
* Class-D amplifiers
* DC-to-DC converters
* Motor control
* Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS .