PSMN3R5-30YL Datasheet | Nexperia

N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK 3 August 2018 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in industrial and munications applications. 2. Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive sources 3. Applications - Class-D amplifiers - DC-to-DC converters - Motor control - Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 15 A; Tj = 25 °C ID = 10 A; VDS = 12 V; VGS = 4.5 V; Fig. 14; Fig. 15 ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped [1] [1] Continuous current is limited by...