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PSMN3R5-30YL - N-channel MOSFET

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in industrial and communications applications.

2.

Features

  • High efficiency due to low switching and conduction losses.
  • Suitable for logic level gate drive sources 3.

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PSMN3R5-30YL N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK 3 August 2018 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 2. Features and benefits • High efficiency due to low switching and conduction losses • Suitable for logic level gate drive sources 3. Applications • Class-D amplifiers • DC-to-DC converters • Motor control • Server power supplies 4. Quick reference data Table 1.
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