PSMN3R5-30YL Overview
Key Specifications
Package: SOT
Pins: 4
Height: 6.35 mm
Length: 6.35 mm
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.
Key Features
- High efficiency due to low switching and conduction losses
- Suitable for logic level gate drive sources
