| Part Number | PZT5551 Datasheet |
|---|---|
| Manufacturer | Good-Ark Semiconductor |
| Overview |
PZT5551 NPN Transistor
Features
■ High voltage ■ For high voltage amplifier applications
Absolute Maximum Ratings (TA = 25 °C unless otherwise noted)
Parameter Collector-Base Voltage Collector-Emit.
* High voltage * For high voltage amplifier applications Absolute Maximum Ratings (TA = 25 °C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction T. |
PZT5551 Datasheet and Specifications PDF
The PZT5551 is a NPN Transistor.
Key Specifications
| Part Number | PZT5551 Datasheet |
|---|---|
| Description | NPN Silicon Planar Epitaxial Transistor |
| Manufacturer | Weitron Technology |
| Overview | PZT5551 NPN Silicon Planar Epitaxial Transistor BASE 1 3 EMITTER COLLECTOR 2, 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 4 1 2 3 SOT-223 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Emit. , I C = 1mA) (VCE = 5V, I C = 10mA) (VCE = 5V, I C = 50mA) Symbol hFE1 hFE2 hFE3 VCE(sat) Min 80 80 50 - Typ 160 - Max 400 0.15 0.2 1 Unit - Collector-Emitter Saturation Voltages (IC = 10mA, IB = 1mA) (IC = 50mA, IB = 5mA) V V V Base-Emitter Saturation Voltages (IC = 10mA, IB = 1mA) (IC = 50. |
| Part Number | PZT5551 Datasheet |
|---|---|
| Description | HIGH VOLTAGE SWITCHING TRANSISTOR |
| Manufacturer | Unisonic Technologies |
| Overview |
UNISONIC TECHNOLOGIES CO., LTD PZT5551
HIGH VOLTAGE SWITCHING TRANSISTOR
FEATURES
* High Collector-Emitter Voltage: VCEO=160V *High current gain
NPN SILICON TRANSISTOR
*Pb-free plating product num.
* High Collector-Emitter Voltage: VCEO=160V *High current gain
NPN SILICON TRANSISTOR
*Pb-free plating product number:PZT5551L
* ORDERING INFORMATION Order Number Normal Lead Free Plating PZT5551-x-AA3-F-R PZT5551L-x-AA3-F-R Package SOT-223 Pin Assignment 1 2 3 B C E Pac. |