PZTA13 Datasheet

The PZTA13 is a NPN Silicon Darlington Transistors.

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Part NumberPZTA13
ManufacturerInfineon
Overview PZTA13, PZTA14 NPN Silicon Darlington Transistors  For general AF applications  High collector current  High current gain  Complementary types: PZTA63, PZTA64 (PNP) 4 3 2 1 VPS05163 Type PZTA13. eakdown voltage IC = 100 µA, VBE = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 10 V, IC = 0 DC current gain .
Part NumberPZTA13
DescriptionNPN Darlington Transistor
ManufacturerFairchild Semiconductor
Overview TO-18 OPTION STD TO-5 OPTION STD TO-92 STANDARD STRAIGHT LEADCLIP DIMENSION NO LEAD CLIP NO LEAD CLIP NO LEADCLIP QUANTITY 2.0 K / BOX 1.5 K / BOX 2.0 K / BOX BULK OPTION See Bulk Packing Information. therwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA13 625 5.0 83.3 200 Max *MMBTA13 350 2.8 357 **PZTA13 1,000 8.0 125 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." .
Part NumberPZTA13
DescriptionNPN Silicon Darlington Transistors
ManufacturerSiemens Semiconductor Group
Overview NPN Silicon Darlington Transistors PZTA 13 PZTA 14 For general AF applications q High collector current q High current gain q Complementary types: PZTA 63 PZTA 64 (PNP) q Type PZTA 13 PZTA 14 Mark. cs at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 100 µA Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCE = 30 V, IE = 0 VCE = 30 V, I.