| Part Number | R6020ENJ Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source.
*Drain Current *ID= 20A@ TC=25℃ *Drain Source Voltage- : VDSS=600V(Min) *Static Drain-Source On-Resistance : RDS(on) = 196mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies an. |
R6020ENJ Datasheet and Specifications PDF
The R6020ENJ is a N-Channel MOSFET.
| Part Number | R6020ENJ Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | ROHM |
| Overview | R6020ENJ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V TO-263S RDS(on)(Max.) 0.196Ω SC-83 ID ±20A LPT(S) PD lFeatures 231W lInner circuit 1) Low on-resistance.. 231W lInner circuit 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing Embossed Tape Reel size (mm) . |