| Part Number | RJK6015DPK Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID= 21A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.36Ω(Max) ·Fast Switching ·Minimum Lo.
*Drain Current ID= 21A@ TC=25℃ *Drain Source Voltage- : VDSS= 600V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.36Ω(Max) *Fast Switching *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS * Low on-resistance * Low leakage current * High speed . |
RJK6015DPK Datasheet and Specifications PDF
The RJK6015DPK is a N-Channel MOSFET.
| Part Number | RJK6015DPK Datasheet |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Manufacturer | Renesas |
| Overview |
RJK6015DPK
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1536-0200 Rev.2.00 Apr 18, 2007
Features
• Low on-resistance • Low leakage current • High speed switching
O.
* Low on-resistance * Low leakage current * High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak . |