| Part Number | SI1029X Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
MOSFET
Complementary MOSFET SI1029X
■ Features
● N-Channel VDS = 60V, ID = 500mA RDS(ON) < 1.4 Ω @ VGS=10V RDS(ON) < 3 Ω @ VGS=4.5V
● P-Channel VDS = -60V, ID = -500mA RDS(ON) < 4 Ω @ VGS=.
* N-Channel VDS = 60V, ID = 500mA RDS(ON) < 1.4 Ω @ VGS=10V RDS(ON) < 3 Ω @ VGS=4.5V * P-Channel VDS = -60V, ID = -500mA RDS(ON) < 4 Ω @ VGS=-10V RDS(ON) < 8 Ω @ VGS=-4.5V S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View SOT-563 0.20 ± 0.10 1.20 ± 0.10 1.60 ± 0.10 4 3 5 2 6 1 Unit:mm 0.05 (. |
SI1029X Datasheet and Specifications PDF
The SI1029X is a Complementary MOSFET.
| Part Number | SI1029X Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Vishay |
| Overview |
Si1029X
Vishay Siliconix
Complementary N- and P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
N-Channel
1.40 at VGS = 10 V 60
3 at VGS = 4.5 V
4 at VGS = - 10 V
P-Channel
- 60
.
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFETs * Very Small Footprint * High-Side Switching * Low On-Resistance: N-Channel, 1.40 P-Channel, 4 * Low Threshold: ± 2 V (typ.) * Fast Switching Speed: 15 ns (typ.) * Gate-Source ESD Protected: 2000 V * Compliant to Ro. |