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SI1029X - MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFETs.
  • Very Small Footprint.
  • High-Side Switching.
  • Low On-Resistance: N-Channel, 1.40  P-Channel, 4 .
  • Low Threshold: ± 2 V (typ. ).
  • Fast Switching Speed: 15 ns (typ. ).
  • Gate-Source ESD Protected: 2000 V.
  • Compliant to RoHS Directive 2002/95/EC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () N-Channel 1.40 at VGS = 10 V 60 3 at VGS = 4.5 V 4 at VGS = - 10 V P-Channel - 60 8 at VGS = - 4.5 V ID (mA) 500 200 - 500 - 25 S1 1 G1 2 SC-89 6 D1 5 G2 Marking Code: H D2 3 4 S2 Top View Ordering Information: Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Very Small Footprint • High-Side Switching • Low On-Resistance: N-Channel, 1.40  P-Channel, 4  • Low Threshold: ± 2 V (typ.) • Fast Switching Speed: 15 ns (typ.