SI1023X - Dual P-Channel MOSFET

Vishay

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
TrenchFET® Power MOSFET: 1.8 V Rated.
Very Small Footprint.
High-Side Switching.
Low On-Resistance: 1.2 .
Low Threshold: 0.8 V (typ. ).
Fast Switching Speed: 14 ns.
1.8 V Operation.
Gate-Source ESD Protected: 2000 V.
Compliant to RoHS Directive 2002/95/EC.

SI1023X dual p-channel mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SI1023X
Manufacturer	Vishay
File Size	138.52 KB
Description	Dual P-Channel MOSFET
Datasheet	SI1023X Datasheet

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Full PDF Text Transcription (Reference)

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Dual P-Channel 20 V (D-S) MOSFET Si1023X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 1.2 at VGS = - 4.5 V - 20 1.6 at VGS = - 2.5 V 2.7 at VGS = - 1.8 V ID (mA) - 350 - 300 - 150 SOT-563 SC-89 S1 1 G1 2 6 D1 5 G2 Marking Code: B D2 3 4 S2 Top View Ordering Information: Si1023X-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 1.8 V Rated • Very Small Footprint • High-Side Switching • Low On-Resistance: 1.2  • Low Threshold: 0.8 V (typ.) • Fast Switching Speed: 14 ns • 1.