SI1022R - N-Channel MOSFET

Vishay

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
TrenchFET® Power MOSFETs.
Low On-Resistance: 1.25 .
Low Threshold: 2.5 V.
Low Input Capacitance: 30 pF.
Fast Switching Speed: 25 ns.
Low Input and Output Leakage.
Miniature Package.
ESD Protected: 2000 V.
Compliant to RoHS Directive 2002/95/EC.

SI1022R n-channel mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SI1022R
Manufacturer	Vishay
File Size	145.90 KB
Description	N-Channel MOSFET
Datasheet	SI1022R Datasheet

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Full PDF Text Transcription (Reference)

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N-Channel 60 V (D-S) MOSFET Si1022R Vishay Siliconix PRODUCT SUMMARY VDS(min.) (V) RDS(on) () 60 1.25 at VGS = 10 V VGS(th) (V) 1 to 2.5 ID (mA) 330 SC-75A (SOT-416) G1 3D S2 Marking Code: E Ordering Information: Si1022R-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Low On-Resistance: 1.25  • Low Threshold: 2.5 V • Low Input Capacitance: 30 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • Miniature Package • ESD Protected: 2000 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.