| Part Number | SI9410DY Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
N-Channel MOSFET SI9410DY (KI9410DY)
■ Features
● VDS (V) = 30V ● ID = 7 A (VGS = 10V) ● RDS(ON) ＜ 30mΩ (VGS = 10V) ● RDS(ON) ＜ 40mΩ (VGS = 5V) ● RDS(ON) ＜ 50mΩ (VGS = 4.5V)
SOP-8
MOSFET
.
* VDS (V) = 30V * ID = 7 A (VGS = 10V) * RDS(ON) ＜ 30mΩ (VGS = 10V) * RDS(ON) ＜ 40mΩ (VGS = 5V) * RDS(ON) ＜ 50mΩ (VGS = 4.5V) SOP-8 MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain DDD D G S SS +0.04 0.21 -0.02 * Absolute Maximum Ratings Ta = 25℃ Parameter D. |
SI9410DY Datasheet and Specifications PDF
The SI9410DY is a N-Channel MOSFET.
| Part Number | SI9410DY Datasheet |
|---|---|
| Description | N-channel enhancement mode field-effect transistor |
| Manufacturer | NXP Semiconductors |
| Overview | N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si9410DY in SOT96-1 (SO8). 2. Features s Low on-state resistance s Fast swit. s Low on-state resistance s Fast switching s TrenchMOS™ technology. 3. Applications s s s s s DC to DC convertors DC motor control Lithium-ion battery applications Notebook PC Portable equipment applications. c c 4. Pinning information Table 1: Pin 1 2,3 4 5,6,7,8 Pinning - SOT96-1, simplified out. |
| Part Number | SI9410DY Datasheet |
|---|---|
| Description | N-Channel 30-V (D-S) MOSFET |
| Manufacturer | Vishay |
| Overview |
only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such pr.
mber: 70122 S-31060 *Rev. M, 26-May-03 Symbol RthJA Limit 50 Unit _C/W 1 Si9410DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb VGS(th) IGSS IDSS. |