SMBJ10A Datasheet
SMBJ10A Datasheet (Taiwan Semiconductor)
Taiwan Semiconductor
SMBJ SERIES Taiwan Semiconductor 600W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES ● Ideal for automated placement ● Glass passivated junction ● Excellent clamping capability ● Fas.
* Ideal for automated placement
* Glass passivated junction
* Excellent clamping capability
* Fast response time: Typically less than 1.0ps
* Typical IR less than 1μA above 10V
* Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b)
* Moisture sensitivity level: level 1, per J-STD-020
* RoHS Compliant
* Halogen-fr.
SMBJ10A Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
SMBJ5V0(C)A - SMBJ170(C)A — 600 Watt Transient Voltage Suppressors November 2014 SMBJ5V0(C)A - SMBJ170(C)A 600 Watt Transient Voltage Suppressors Features • Glass-Passivated Junction • 600 W Peak P.
* Glass-Passivated Junction
* 600 W Peak Pulse Power Capability
on 10/1000 μs Waveform.
* Excellent Clamping Capability
* Low-Incremental Surge Resistance
* Fast Response Time: Typically Less than 1.0 ps from 0 V
to BV minimum for Unidirectional and 5.0 ns for Bidirectional
* Typical IR Less than 1..
SMBJ10A Datasheet (Taitron Components)
Taitron Components
Stand-Off Voltage Peak Pulse Power Dissipation on 10/1000 us waveform Peak Pulse current on 10/1000 us waveform Steady State Power Dissipation Peak Forward Surge Current Maximum Instantaneous Forward .
z Stand-off voltage from 5.0 to 170 volts z 600W Peak Pulse Power capability on 10/1000 µs waveform repetition rate(duty cycle): 0.01% z Fast response time: typically less than 1.0ps from 0v to VBR z Low incremental surge resistance, excellent clamping capability z z z z Typical IR less than 1 uA ab.
SMBJ10A Datasheet (STMicroelectronics)
STMicroelectronics
The SMBJ series are designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2 and MIL STD 883, method 3015, and electrical overstress according to IEC 61000-4.
* Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs)
* Stand-off voltage range from 5 V to 188 V
* Unidirectional and bidirectional types
* Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C
* Operating Tj max: 150 °C
* High power capability at Tj max.: up to 515 W (10/1000 µs)
* Lead finis.