SPA11N60C3 Datasheet
SPA11N60C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor ·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot.
*New revolutionary high voltage technology
*Ultra low gate charge
*High peak current capability
*Improved transconductance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
SPA11N60C3
*APPLICATIONS
*Switching applicati.
SPA11N60C3 Datasheet (Infineon)
Infineon
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanch.
* New revolutionary high voltage technology
* Ultra low gate charge
VDS @ Tjmax RDS(on) ID
* Periodic avalanche rated
PG-TO220FP PG-TO262
* Extreme dv/dt rated
* High peak current capability
* Improved transconductance
23 1 P-TO220-3-31
* PG-TO-220-3-31;-3-111: Fully isolated package (2500 VA.