SPA11N60CFD Datasheet
SPA11N60CFD Datasheet (Infineon)
Infineon
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* New revolutionary high voltage technology
* Intrinsic fast-recovery body diode
* Extremely low reverse recovery charge
* Ultra low gate charge
* Extreme dv /dt rated
* High peak current capability
* Periodic avalanche rated
* Qualified according to JEDEC0) for target applications
Product Summary .
SPA11N60CFD Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minim.
*With TO-220F package
*Low input capacitance and gate charge
*Low gate input resistance
*Reduced switching and conduction losses
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switching applications
INCHANGE Semiconductor
SP.