SPA16N50C3 Datasheet
SPA16N50C3 Datasheet (Infineon)
Infineon
SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.28 16 V Ω A • Periodic avalan.
* New revolutionary high voltage technology
* Ultra low gate charge
VDS @ Tjmax RDS(on) ID
560 0.28 16
V Ω A
* Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
* Extreme dv/dt rated
2
* Ultra low effective capacitances
* Improved transconductance
P-TO220-3-31
3 12
* PG-TO-220-3-31;-.
SPA16N50C3 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPA16N50C3 ·FEATURES ·Drain-source on-resistance: RDS(on) ≤ 250mΩ@10V ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum .
*Drain-source on-resistance:
RDS(on) ≤ 250mΩ@10V
*Reduced switching and conduction losses
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
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