SPP24N60CFD Datasheet and Specifications PDF

SPP24N60CFD CoolMOSTM Power Transistor Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge Product Summary V DS @ Tjmax R DS(on),max ID • E.

* Intrinsic fast-recovery body diode
* Extremely low reverse recovery charge
* Ultra low gate charge Product Summary V DS @ Tjmax R DS(on),max ID
* Extreme dv /dt rated
* High peak current capability
* Qualified for industrial grade applications according to JEDEC1) 650 V 0.185 " 21.7 A PG-TO220.

·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Con.

*Static drain-source on-resistance: RDS(on) ≤0.185Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRIPTION
*Ultra low gate charge
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃).