SPW11N60C3 Datasheet and Specifications PDF

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* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* Improved transconductance V Ω A Type SPW11N60C3 Package P-TO247 Ordering Code Q67040-S4418 Marking 11N60C3 Maximum Ratings Parameter Continuous .

isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60C3 ISPW11N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lo.

*Static drain-source on-resistance: RDS(on)≤380mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
* High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source.