SPW35N60CFD Datasheet
SPW35N60CFD Datasheet (Infineon)
Infineon
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TM
Power Transistor
Product Summary V DS R DS(on),max ID 600 V
* New revolutionary high voltage technology
* Intrinsic fast-recovery body diode
* Extremely low reverse recovery charge
* Ultra low gate charge
* Extreme dv /dt rated
* High peak current capability
* Periodic avalanche rated
* Quali.
SPW35N60CFD Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤118mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and .
*Static drain-source on-resistance:
RDS(on)≤118mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source .