SSF2814E Datasheet and Specifications PDF

The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. SSF2814E 20V Dual N-Channel MOSFET GENERAL FEATURES ● VDS .

* VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating：2000V HBM
* High Power and current handing capability
* Lead free product
* Surface Mount Package Schematic Diagram Marking and Pin Assignment APPLICATIONS
*Battery .

The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. SSF2814E GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 28.

* VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating：2000V HBM
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package Schematic diagram Marking and pin Assignment Applicatio.