SSF5508 Datasheet
SSF5508 Datasheet (Silikron Semiconductor Co)
Silikron Semiconductor Co
The SSF5508 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeat.
9.12.26
Max. 110 80 400 170 2.0 ±20 31 480 TBD
*55 to +150
Units A W W/ ْC V v/ns mJ
Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Peak diode recovery voltage Single pulse avalanche energy ②.
SSF5508 Datasheet (Good-Ark Semiconductor)
Good-Ark Semiconductor
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an .
and Benefits
TO-220
* Advanced trench MOSFET process technology
* Special designed for PWM, load switching and
general purpose applications
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 175℃ operating temperature
* Lead free product
SSF5508
55V N-Chan.