STB11N65M5 Datasheet
STB11N65M5 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to.
*With TO-263(D2PAK) packaging
*High speed switching
*Low gate input resistance
*Standard level gate drive
*Easy to use
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Power supply
*Switching applications
*ABSOLUTE MAXIMUM RAT.
STB11N65M5 Datasheet (STMicroelectronics)
STMicroelectronics
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout .
Order codes
STB11N65M5 STD11N65M5 STF11N65M5 STP11N65M5 STU11N65M5
VDSS @ RDS(on)
TJmax
max
ID
710 V < 0.48 Ω 9 A
* Worldwide best RDS(on) * area
* Higher VDSS rating and high dv/dt capability
* Excellent switching performance
* 100% avalanche tested
Applications
* Switching applications
TA.