STB20NM50 Datasheet and Specifications PDF

isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.

*Drain Current ID= 20A@ TC=25℃
*Drain Source Voltage- : VDSS= 500V(Min)
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE.

The MDmesh™ is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-re.

Type STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP VDSS (@TJmax) 550V 550V 550V 550V RDS(on) < 0.25Ω < 0.25Ω < 0.25Ω < 0.25Ω ID 20A 20A 20A 20A
* High dv/dt and avalanche capabilities
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance Description The MDme.