STB20NM60D Datasheet and Specifications PDF

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular .

Type STB20NM60D
* VDSS 600V RDS(on) <0.29Ω ID 20A Pw 45W High dv/dt and avalanche capabilities tested 1 3
* 100% Avalanche
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* Low input capacitance and gate charge Low gate input resistance Tight process control and high manufacturing yields D²PAK Description The FDme.

·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Cu.

*Drain Current
*ID= 20A@ TC=25℃
*Drain Source Voltage- : VDSS= 600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Low Drain-Source On-Resistance APPLICATIONS
*Sw.