STB25NM60ND Datasheet and Specifications PDF

The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advan.

Type VDSS @ TJMAX RDS(on) max ID 3 3 1 2 3 1 2 1 STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND 650 V 0.16 Ω 21 A 21 A 21 A(1) 21 A 21 A TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed
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* 3 12 2 1 3 The worldwide best RDS.

·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Cu.

*Drain Current
*ID=21A@ TC=25℃
*Drain Source Voltage- : VDSS= 600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 160mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Low Drain-Source On-Resistance APPLICATIONS
*Swi.