STB28NM60ND Datasheet and Specifications PDF

These FDmesh™ II Power MOSFETs with 6 intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ $0Y technology. Utilizing a new strip-layout vertical struct.

Order codes VDS @ TJ max. RDS(on) max ID STB28NM60ND STF28NM60ND 650 V STP28NM60ND 0.150 Ω 23 A STW28NM60ND
* Intrinsic fast-recovery body diode
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance
* Extremely high dv/dt and avalanche capabilities Ap.

·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Cu.

*Drain Current
*ID=23A@ TC=25℃
*Drain Source Voltage- : VDSS= 600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 150mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Low Drain-Source On-Resistance APPLICATIONS
*Swi.