STB31N65M5 Datasheet
STB31N65M5 Datasheet (STMicroelectronics)
STMicroelectronics
AM01475v1_noZen These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting produc.
Order code
VDS @ TJMAX
RDS(on ) max.
STB31N65M5
STF31N65M5 STP31N65M5
710 V
0.148 Ω
STW31N65M5
* Extremely low RDS(on)
* Low gate charge and input capacitance
* Excellent switching performance
* 100% avalanche tested
ID 22 A
Package D2PAK TO-220FP TO-220 TO-247
G(1)
Applications
* Swit.
STB31N65M5 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
Isc N-Channel MOSFET Transistor STB31N65M5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variatio.
*With To-263(D2PAK) package
*Low input capacitance and gate charge
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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